1400 nm to 2000 nm semiconductor laser diodes from nLIGHT

A new generation of 1400 nm to 2000 nm semiconductor laser diodes based on indium phosphide (InP) from nLIGHT (Vancouver, WA) provides both high power and efficiency. These wavelengths open up a wide range of surgical and aesthetic medical applications through either direct use or to pump holmium or erbium lasers.

A new generation of 1400 nm to 2000 nm semiconductor laser diodes based on indium phosphide (InP) from nLIGHT (Vancouver, WA) provides both high power and efficiency. These wavelengths open up a wide range of surgical and aesthetic medical applications through either direct use or to pump holmium or erbium lasers.

At 1.9 microns, the Pearl fiber-coupled module provides up to 20 watts output power from a single 400 micron 0.22NA fiber with >10% wall-plug efficiency. Single emitter chips produce up to 1.5 watts rated power on expansion matched substrates.

At 1.4 and 1.5 microns, the Pearl module provides up to 40 watts from a single 400 micron 0.22NA fiber and >30% wall-plug efficiency. Single emitter chips produce up to 3.5 watts rated power on expansion matched substrates.

More information:
nLIGHT's Pearl high-power fiber-coupled module

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